elektronische bauelemente SBESD5301N 82w, 5v ultra low capacitance esd protection for high-speed interfaces 18-dec-2013 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. * = date code rohs compliant product a suffix of -c specifies halogen and lead-free description the SBESD5301N is an ultra-low capacitance tvs (transient voltage suppressor) designed to protect high speed data interfaces. it has been specifically des igned to protect sensitive electronic components which are c onnected to data and transmission lines from over-stress cau sed by esd (electrostatic discharge). the SBESD5301N incorporates one pair of ultra- low capacitance steering diodes plus a tvs diode. the SBESD5301N may be used to provide esd protectio n up to 25kv (contact discharge) according to iec610 00-4-2, and withstand peak pulse current up to 5.5a (8/20 s) according to iec61000-4-5.the SBESD5301N is availab le in dfn1006-2l package. applications mobile phone pad notebook lcd tv other electronics equipments features ultra-low clamping voltage low leakage current small package marking package information package mpq leader size dfn1006-2l 5k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) rating symbol value unit air contact 25 iec 61000-4-2 (esd) contact discharge 25 kv peak pulse power (tp=8/20us) p pk 82 w peak pulse current (tp=8/20us) i pp 5.5 a storage temperature range t j , t stg 125, -55 ~ 150 c lead temperature t l 260 c . dfn1006-2l 7 * millimeter millimeter ref. min. max. ref. min. max. a 0.95 1.05 e 0.65 typ. b 0.55 0.65 f 0.3 0.4 c 0.2 0.3 g 0.00 0.05 d 0.45 0.55 circuit diagram
elektronische bauelemente SBESD5301N 82w, 5v ultra low capacitance esd protection for high-speed interfaces 18-dec-2013 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol condition min. typ. max. units reveres maximum working voltage v rwm - - 5 v reveres leakage current i r v rwm =5v - 0.1 100 na reveres breakdown voltage v br i t =1ma 7 8 9 v forward voltage v f i t =10ma 0.6 0.9 1.2 v clamping voltage 1 v cl i pp =16a, tp=100ns - 18 - v dynamic resistance 1 r dyn - 0.57 - i pp =1a, tp=8/20us - - 10 v clamping voltage 2 v c i pp =5.5a, tp=8/20us - - 15 v junction capacitance c j f=1mhz, v r =0 - 0.4 0.55 pf note: 1. tlp parameter: z0 = 50 , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. rdyn is calculated from 4a to16a. 2. according to iec61000-4-5. ratings and characteristics curves
elektronische bauelemente SBESD5301N 82w, 5v ultra low capacitance esd protection for high-speed interfaces 18-dec-2013 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ratings and characteristics curves
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